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| NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high-voltage video and luminance output stages in TV receivers. Features: D High Collector-Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector-Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Base Voltage, VEBO NTE191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W Thermal Resistance, Junction-to-Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Note 1. NTE191 is a discontinued device and no longer available. Note 2. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage NTE191 NTE240 V(BR)CEO IC = 1mA, IB = 0, Note 3 V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 100A, IC = 0 300 300 6 5 - - - - - - - - V V V V Symbol Test Conditions Min Typ Max Unit Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter OFF Characteristics (Cont'd) Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain (NTE191 & NTE240) NTE191 hFE IC = 1mA, VCE = 10V, Note 3 IC = 10mA, VCE = 10V, Note 3 IC = 30mA, VCE = 10V, Note 3 NTE240 IC = 10mA, VCE = 10V, Note 3 IC = 30mA, VCE = 10V, Note 3 Collector-Emitter Saturation Voltage Base-Emitter ON Voltage NTE191 NTE240 Dynamic Characteristics Current Gain-Bandwidth Product NTE191 NTE240 Collector-Base Capacitance NTE191 NTE240 Ccb fT IC = 10mA, VCE = 20V, f = 100MHz, Note 2 VCB = 20V, IE = 0, f = 1MHz 45 60 - - - - - - - - 3.0 8.0 MHz MHz pF pF VCE(sat) VBE(on) IC = 30mA, IB = 3mA IC = 30mA, VCE = 10V 25 40 40 30 30 - - - - - - - - - - - - - - - - 0.75 0.85 0.90 V V V ICBO IEBO VCB = 200V, IE = 0 VBE = 6V, IC = 0 - - - - 0.2 0.1 A A Symbol Test Conditions Min Typ Max Unit Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia .100 (2.54) .218 (5.55) EBC .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab |
Price & Availability of NTE191
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